If we define T mb = 25☌, T j(max) = 175☌, and R th(j-mb) = (0.4 K/W max), we can calculate the maximum power as follows: When calculating maximum continuous current, the maximum steady-state power must be used.
The maximum current that a MOSFET can achieve is primarily derived from the maximum power allowance in the MOSFET. As the speakers noted, it is a single parameter that captures thermal performance, temperature rating, R DS(on), silicon die resistance, and package resistance. I D is the maximum continuous drain-source current that the MOSFET can sustain while fully enhanced at T mb = 25☌ and die at max junction temperature. Engineers and electrical designers must thoroughly comprehend the essential capabilities, constraints, and environmental circumstances to pick the appropriate MOSFET for the application.
Current can flow via any of these terminals, which are labeled I G, I S, and I D. The MOSFET has three terminals: gate, source, and drain. The drain current (I D) limit indicated in the datasheets of power MOSFETs is one of the most important parameters in such high-power applications in which the management of very high currents is required. This requires careful consideration of design requirements and an understanding of maximum ratings in circuit design to get the best performance from power MOSFETs and maintain device reliability during the required operating life.ĭuring Nexperia’s Power Live Event, Stein Hans Nesbakk, application engineer, and Steven Waterhouse, international product marketing manager, both at Nexperia, noted the need for the correct evaluation of the drain current and the possible use of protection circuits to compensate for high-current events and thus offer a highly reliable product.
Along with current module space constraints, this means that the need to handle more power is being passed on to components, particularly MOSFETs. Applications such as motor drives now require power output in the kilowatts. In today’s automotive and industrial electronics, low-voltage MOSFETs (<100 V) have seen an increased demand for high power.
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